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EIA JESD 24-12:2004
New product
EIA JESD 24-12:2004
Thermal Impedance Measurement for Insulated Gate Bipolar Transistors (Delta VCE(on) Method)More info
The purpose of this test method is to measure the thermal impedance of the IGBT (Insulated Gate Bipolar Transistor) under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the collector-emitter on voltage, VCE(on), is used as the junction temperature indicator. This is an alternative method to JEDEC Standard No. 24-6.
| Author | EIA |
|---|---|
| Editor | EIA |
| Document type | Standard |
| Format | File |
| ICS | 17.200.01 : Thermodynamics in general
|
| Number of pages | 16 |
| Modify | EIA JESD 24 (1985)
|
| Year | 2004 |
| Document history | |
| Country | USA |
| Keyword | EIA JESD 24;EIA 24;EIA 24.12;24;EIA JESD24-12 |