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EIA JESD 90:2004

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EIA JESD 90:2004

A Procedure for Measuring P-Channel MOSFET Negative Bias Temperature Instabilities

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This document describes an accelerated stress and test methodology for measuring device paramete
changes of a single p-channel MOSFET after Negative Bias Temperature Instability (NBTI) stress at dc bias conditions. This document gives a procedure to investigate NBTI stress in a symmetric voltage condition with the channel inverted (VGS < 0) and no channel conduction (VDS = 0).There can be NBTI degradation during channel conduction (VGS < 0, VDS < 0), however, this document does not cover this phenomena.

Author EIA
Editor EIA
Document type Standard
Format File
ICS 31.200 : Integrated circuits. Microelectronics
Number of pages 20
Year 2004
Document history
Country USA
Keyword EIA 90;90;EIA JESD90