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This part of IEC 62804 defines procedures to test and evaluate the durability of crystalline silicon photovoltaic (PV) modules to the effects of short-term high-voltage stress including potential-induced degradation (PID). Two test methods are defined that do not inherently produce equivalent results. They are given as screening tests - neither test includes all the factors existing in the natural environment that can affect the PID rate. The methods describe how to achieve a constant stress level.
| Author | VDE |
|---|---|
| Editor | VDE |
| Document type | Standard |
| Format | Paper |
| ICS | 27.160 : Solar energy engineering
|
| Number of pages | 14 |
| Replace | DIN EN 62804 (2013-10) |
| Cross references | IEC/TS 62804-1 (2015-08), IDT
|
| Weight(kg.) | 0.1238 |
| Year | 2017 |
| Document history | DIN IEC/TS 62804-1 (2017-05) |
| Country | Germany |
| Keyword | DIN IEC/TS 62804;62804 |